Process Hierarchy

on front
Process characteristics:
Plating area
Area to be plated.
Plating area
Area to be plated., must be 0.31 .. 7850 mm2
0.31 .. 7850 mm2
Amount of material added to a wafer
Amount of material added to a wafer, must be 1 .. 30 µm
1 .. 30 µm
Aspect ratio 0.1 .. 15
Sides processed either
Temperature 25 .. 60 °C
Wafer size
Wafer size
Equipment Custom Plating cell Model 1
Equipment characteristics:
Batch sizes 100 .. 200 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Pyrex (Corning 7740), silicon on insulator, silicon, ceramic, gallium arsenide, fused silica, Borofloat (Schott), glass-ceramic
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm