on front Silicon dioxide PECVD |
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| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
nitrous oxide, silane, helium |
|---|
| Batch size |
12 |
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| Deposition rate Rate at which material is added to a wafer |
270 Å/min |
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| Material |
silicon dioxide |
|---|
| Microstructure |
amorphous |
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| Refractive index |
1.456 |
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| Residual stress |
-400 MPa |
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| Sides processed |
either |
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| Temperature |
350 °C |
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| Uniformity |
-0.07 .. 0 |
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| Wafer size |
|
|---|
| Equipment |
Custom PECVD |
| Equipment characteristics: |
| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, Borofloat (Schott), indium phosphide, silicon, gallium arsenide, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 2000 µm |
|---|
