on front Advanced Oxide Etch (STS-AOE) Down |
|
| Process characteristics: |
| Depth |
|
|---|
| Mask material Materials that can be used to mask etching. |
|
|---|
| Material |
|
|---|
| Etch rate |
0.1 .. 0.5 µm/min |
|---|
| Etch type |
dry anisotropic |
|---|
| Sides processed |
either |
|---|
| Wafer size |
|
|---|
| Equipment |
STS- AOE |
| Equipment characteristics: |
| Batch sizes |
150 mm: 1 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, fused silica, Borofloat (Schott) |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 700 µm |
|---|
