Process Hierarchy

  Amorphous silicon LPCVD
Process characteristics:
Thickness of material to be deposited.
Thickness of material to be deposited., must be 0.05 .. 0.2 µm
0.05 .. 0.2 µm
Ambient to which substrate is exposed during processing
Material amorphous silicon
Sides processed both
Temperature 565 °C
Wafer size
Wafer size
Equipment Furnace - Silicon
Equipment characteristics:
Batch sizes 100 .. 200 mm: 25
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 700 µm