Process Hierarchy

  Aluminum Nitride (AlN) Sputter Deposition
Process characteristics:
Thickness
Thickness*
must be 0 .. 1 µm
0 .. 1 µm
Material aluminum nitride
Temperature 500 °C
Wafer size
Wafer size
Equipment Unaxis CLC 200
Equipment characteristics:
Batch sizes 100 mm: 25
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Wafer holder
Device that holds the wafers during processing.
aluminum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, PZT
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 600 µm