on front Silicon Nitride PECVD (STS) |
|
| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
nitrogen, silane, ammonia |
|---|
| Deposition rate Rate at which material is added to a wafer |
160 Å/min |
|---|
| Material |
silicon nitride |
|---|
| Microstructure |
amorphous |
|---|
| Pressure Pressure of process chamber during processing |
2.6 Torr |
|---|
| Residual stress |
-100 .. 100 MPa |
|---|
| Sides processed |
either |
|---|
| Temperature |
300 °C |
|---|
| Uniformity |
0.02 |
|---|
| Wafer size |
|
|---|
| Equipment |
STS PECVD |
| Equipment characteristics: |
| Batch sizes |
150 mm: 1 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, fused silica, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
|---|
