|
| Process characteristics: |
| Thickness |
|
|---|
| Material |
silicon dioxide |
|---|
| Temperature |
700 °C |
|---|
| Uniformity |
0.05 |
|---|
| Wafer size |
|
|---|
| Equipment |
FNB1 |
| Equipment characteristics: |
| Batch sizes |
150 mm: 25 |
|---|
| MOS clean |
yes |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 675 µm |
|---|
