Process Hierarchy

  4X align and exposure
Process characteristics:
Resist thickness
Resist thickness*
must be 0.65 .. 1.8 µm
0.65 .. 1.8 µm
Alignment tolerance
Registration of CAD data to features on wafer
0.15 µm
Alignment type
Method used to align materials to be bonded.
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
Field geometry
Shape of field with dimensions characterized by the maximum field size
Magnification 4
Min feature size 0.5 µm
Wafer size
Wafer size
Equipment Ultratech XLS200 4X stepper
Equipment characteristics:
Batch sizes 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Corning Eagle 2000, silicon, Corning 1737, silicon on insulator, quartz (fused silica)
Wafer thickness
List or range of wafer thicknesses the tool can accept
500 .. 900 µm