on front Alumina/ Zinc Oxide (Al2O3/ZnO) alloy Atomic Layer Deposition (ALD) |
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| Process characteristics: |
| Resistivity Resistivity of the alloy |
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| Temperature |
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| Thickness |
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| Batch size |
1 |
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| Material |
Alumina / Zinc oxide (Al2O3/ZnO) alloy |
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| Pressure Pressure of process chamber during processing |
1 Torr |
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| Relative dielectric constant |
7.5 .. 7.8 |
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| Sides processed |
either |
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| Equipment |
Viscous flow reactor |
| Equipment characteristics: |
| MOS clean |
no |
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| Piece dimension Range of wafer piece dimensions the equipment can accept |
1 .. 150 mm |
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| Piece geometry Geometry of wafer pieces the equipment can accept |
triangular shard, other, rectangular, irregular, circular |
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| Piece thickness Range of wafer piece thickness the equipment can accept |
100 .. 1000 µm |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
fused silica, silicon on insulator, alumina, silicon, polycarbonate |
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| Attachments |
ALD_summary.pdf (205.0 KB, application/pdf)- attached by ozgur (Mehmet Ozgur) on 2005-07-18 10:11
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