Low-Stress LPCVD Silicon Nitride |
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| Process characteristics: |
| Thickness |
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| Allowed materials |
silicon (category), silicon (single crystal), silicon dioxide on silicon, silicon dioxide, silicon on insulator, polysilicon on silicon dioxide, silicon nitride, silicon oxy-nitride, silicon (doped), silicon germanium, silicon nitride on silicon, silicon on sapphire, polysilicon, silicon dioxide (low temperature), silicon, silicon carbide, quartz (fused silica), silicon nitride on silicon dioxide, quartz (single crystal), silicon dioxide (category), silicon/glass composite, polysilicon on quartz, silicon nitride on quartz |
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| Ambient Ambient to which substrate is exposed during processing |
dichlorosilane, ammonia |
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| Material |
silicon nitride |
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| Refractive index |
2.2 |
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| Residual stress |
100 .. 300 MPa |
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| Sides processed |
both |
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| Temperature |
820 °C |
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| Uniformity |
0.075 |
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| Wafer size |
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| Equipment |
Furnace : Nitride |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 150 mm: 25, 200 mm: 25 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon on insulator, silicon |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
274 .. 700 µm |
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