Process Hierarchy

on front
  Silicon dioxide PECVD (TEOS)
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.05 .. 5 µm
0.05 .. 5 µm
Ambient to which substrate is exposed during processing
TEOS, oxygen, nitrogen
Material silicon dioxide
Microstructure amorphous
Sides processed either
Uniformity -0.03 .. 0.03
Wafer size
Wafer size
Equipment Oxford Plasmalab PECVD System
Equipment characteristics:
Batch sizes 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
Extra terms