Process Hierarchy

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  Silicon oxide dry etch
Process characteristics:
must be 0.2 .. 30 µm
0.2 .. 30 µm
Mask material
Materials that can be used to mask etching.
Mask material*
Materials that can be used to mask etching.
Etch rate 0.4 .. 0.7 µm/min
Etch type dry anisotropic
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
aluminum: 20, photoresist (category): 3, polysilicon: 8
Sides processed either
Wafer size
Wafer size
Equipment Applied Materials Centura 5200 etcher
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Pyrex (Corning 7740), silicon on insulator, silicon, fused silica
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
  • Profile angle: 86 +/- 2 degrees
  • Etch selectivity to SiO2 wrt to masking materials
Extra terms