Process Hierarchy

  Undoped polysilicon LPCVD
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.01 .. 1 µm
0.01 .. 1 µm
Batch sizes 100 mm: 50, 150 mm: 25, 75 mm: 50
Material polysilicon
Measured film thickness variation (+/- %) 10
Sides processed both
Temperature 620 °C
Wafer size
Wafer size
Equipment
Comments:
  • Wafers need to cleaned prior to this step.
  • The film has compressive stress.
  • standard metrology includes thickness only.
  • Estimated leadtime: 2 weeks.