Low-stress silicon nitride LPCVD ( <200 MPa): View
Low-stress SiN deposition
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Low-stress silicon nitride LPCVD ( <200 MPa)
Thickness of material to be deposited.
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Rate at which material is added to a wafer
Measured film thickness variation (+/- %)
Pressure of process chamber during processing
2.1 .. 2.3
150 .. 200 MPa
Tylan Furnace (Nitride, tube #10)
100 mm: 23
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), quartz (single crystal), silicon, silicon germanium, silicon on insulator
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
DCS:NH3 ratio= 6:1 (?)
How to Start