Process Hierarchy

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  Silicon nitride PECVD (Unaxis VLR 700)
Materialsilicon nitrideRefractive index1.9Residual stress1850 MPa
Refractive index1 .. 4Thickness0.01 .. 2 µm
Process characteristics:
Perform RTA
Perform RTA*
yes no
Perform thickness metrology
Select one of the options presented here
Perform thickness metrology*
Select one of the options presented here
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 0.15 µm
0 .. 0.15 µm
Material silicon nitride
Wafer size
Wafer size