Process Hierarchy

on front
  Ti DC-magnetron sputtering
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.01 .. 0.5 µm
0.01 .. 0.5 µm
Ambient to which substrate is exposed during processing
Deposition rate
Rate at which material is added to a wafer
0.0144 µm/min
Material titanium
Pressure of process chamber during processing
5 mTorr
Sides processed either
Wafer size
Wafer size
Equipment CVC 610
Equipment characteristics:
Batch sizes 100 mm: 5, 150 mm: 5, 50 mm: 12, 75 mm: 5
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
fused silica, silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm