Process Hierarchy

on front
  Amorphous silicon PECVD
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.01 .. 0.2 µm
0.01 .. 0.2 µm
Ambient to which substrate is exposed during processing
argon, silane
Deposition rate
Rate at which material is added to a wafer
650 Å/min
Excluded materials gold (category), copper
Material silicon
Microstructure amorphous
Pressure of process chamber during processing
1.8 Torr
Sides processed either
Temperature 365 °C
Wafer size
Wafer size
Equipment GSI Ultradep 1000
Equipment characteristics:
Batch sizes 100 mm: 3, 150 mm: 1
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Pyrex (Corning 7740), quartz (fused silica), silicon, silicon on insulator
Extra terms