Process Hierarchy

on front
  Silicon dioxide PECVD (TEOS)
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.01 .. 2 µm
0.01 .. 2 µm
Ambient to which substrate is exposed during processing
nitrogen, oxygen, TEOS
Deposition rate
Rate at which material is added to a wafer
2592 Å/min
Excluded materials gold (category), copper
Material silicon dioxide
Microstructure amorphous
Pressure of process chamber during processing
3 Torr
Residual stress -55 MPa
Sides processed either
Temperature 350 °C
Wafer size
Wafer size
Equipment GSI Ultradep 1000
Equipment characteristics:
Batch sizes 100 mm: 3, 150 mm: 1
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Pyrex (Corning 7740), quartz (fused silica), silicon, silicon on insulator
Extra terms