Process Hierarchy

on front
  Contact G-line photolithography (front-back align, OCG 825 35CS)
  2 HMDS prime
MaterialOCG 825 35CS
on front
  4 Photoresist softbake
Materialphotoresist (category)
on front
  6 Contact G-line exposure
MaterialOCG 825 35CS
MaterialOCG 825 35CS
on front
  8 Microscope inspection
on front
  9 UV bake
Process characteristics:
Perform deep uv bake
Perform deep uv bake*
yes no
Resist thickness
Resist thickness*
Batch size 12
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
Field geometry
Shape of field with dimensions characterized by the maximum field size
Magnification 1
Material OCG 825 35CS
Max field size 150 mm
Min feature size 5 µm
Wafer size
Wafer size