Process Hierarchy

on front
  UV bake
Batch size 12
Exposure time 3 min
Intensity of light source
700 mW/cm/cm
Materials OCG 825 35CS, Arch OiR 897-10i
Sides processed either
Temperature 120 °C
Wavelength of light used during the exposure
280 .. 300 nm
Wafer size
Wafer size
Equipment UV Photostabilizer System
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
heated plate
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon germanium, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
  • The UV bake improves the selectivity of resist in dry etch processes generally by 100% as opposed to the conventional hardbake.