Process Hierarchy

on front
  Contact I-line photolithography with back protected (front-front align, OiR 897 10i)
  2 HMDS prime
MaterialHMDS
MaterialArch OiR 897-10i
Materialphotoresist (category)
MaterialArch OiR 897-10i
on front
  6 Photoresist softbake
Materialphotoresist (category)
on front
  8 Contact I-line exposure
MaterialArch OiR 897-10i
MaterialArch OiR 897-10i
on front
  10 Microscope inspection
on front
  11 UV bake
Process characteristics:
Perform backside protect
Perform backside protect*
yes no
Perform deep uv bake
Perform deep uv bake*
yes no
Resist thickness
Resist thickness*
Batch size 12
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
line
Field geometry
Shape of field with dimensions characterized by the maximum field size
circle
Magnification 1
Material Arch OiR 897-10i
Max field size 150 mm
Min feature size 5 µm
Wafer size
Wafer size
Comments: