Process Hierarchy

on front
  Silicon Dioxide PECVD PlasmaTherm 790
Process characteristics:
Thickness
Thickness
must be 0 .. 2 µm
0 .. 2 µm
Deposition rate
Rate at which material is added to a wafer
33 nm/min
Gas 5%Silane, Nitrous Oxide, Helium
Material silicon dioxide
Microstructure amorphous
Refractive index 1.45
Sides processed either
Temperature 250 °C
Wafer size
Wafer size
Equipment Plasma Therm 790+ Nitride / Oxide PECVD
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1, 200 mm: 1, 50 mm: 1, 75 mm: 1
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer holder
Device that holds the wafers during processing.
aluminum plate
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
gallium arsenide, indium phosphide, silicon carbide, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 700 µm