Process Hierarchy

  Phosphorus-doped polysilicon LPCVD
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.1 .. 5 µm
0.1 .. 5 µm
Batch size 50
Deposition rate
Rate at which material is added to a wafer
0.0025 µm/min
Excluded materials gold (category), copper
Material polysilicon (n-type)
Pressure of process chamber during processing
300 mTorr
Resistivity 0.0012 Ω*cm
Sides processed both
Temperature 580 °C
Wafer size
Wafer size
Equipment MRL furnace 321-3
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 550 µm
  • Wafers must be RCA cleaned within 24 hours of loading,or transferred directly from another furnace.
  • Doping: ~10^20 /cm^3
  • As deposited polysilicon films have compressive residual stress.
Extra terms