Process Hierarchy

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  CVD epitaxy
Process characteristics:
Material
Material to be deposited.
Material
Material to be deposited.
Microstructure
Specify preferred microstructure of deposited film (if known).
Microstructure
Specify preferred microstructure of deposited film (if known).
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
unconstrained
Sides processed
Specify whether deposition is to occur on a single or both sides of substrate.
Sides processed
Specify whether deposition is to occur on a single or both sides of substrate.
Thickness
Thickness of film to be deposited.
Thickness
Thickness of film to be deposited.
unconstrained
Equipment
Comments:
  • Chemical vapor deposition (CVD) epitaxy is typically performed in a cold wall reactor in which only the substrate is heated to temperatures in excess of 1000 degC. The mixture of source gases react with the substrate surface to form a thin film of solid material. If the substrate surface is single crystal material (e.g., silicon), the deposited film will be a single crystal with the same orientation. If the substrate surface is amorphous/polycrystalline (e.g., silicon dioxide or polysilicon), the deposited material will be amorphous/polycrystalline. The process is typically performed on both sides of the substrate at the same time.