Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  LTO LPCVD
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 5 µm
0.1 .. 5 µm
Ambient
Ambient to which substrate is exposed during processing
 oxygen, silane
Batch size 50
Deposition rate
Rate at which material is added to a wafer
 150 Å/min
Excluded materials gold (category), copper
Material silicon dioxide (low temperature)
Microstructure amorphous
Pressure
Pressure of process chamber during processing
 350 mTorr
Sides processed either
Temperature 400 .. 450 °C
Wafer size
Wafer size
Equipment MRL furnace 321-4
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm
Comments:
  • Some oxide to deposit on back side of substrates
  • Wafers must be RCA cleaned within 24 hours of loading, or transferred directly from another furnace.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.