Process Hierarchy

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  Molecular beam epitaxy
Process characteristics:
Material
Material to be deposited.
Material
Material to be deposited.
Microstructure
Specify preferred microstructure of deposited film (if known).
Microstructure
Specify preferred microstructure of deposited film (if known).
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
Residual stress
Specify preferred residual stress in deposited film (if known). Positive values refer to tensile film stress.
unconstrained
Thickness
Thickness of film to be deposited.
Thickness
Thickness of film to be deposited.
unconstrained
Sides processed either
Equipment
Comments:
  • Molecular beam epitaxy (MBE) is done by placing the substrate in an ultra-high vacuum chamber and heating it to 800 degC or less. A crucible containing the material to be deposited is heated by a resistive heater or electron beam to vaporize the source material in the chamber. The vapor condenses on the hot substrate surface, and if the substrate surface is single crystal material (e.g., silicon), the deposited film will be a single crystal with the same orientation. If the substrate surface is amorphous/polycrystalline (e.g., silicon dioxide or polysilicon), the deposited material will be amorphous/polycrystalline. The process is typically performed on one side of the substrate at a time.