Poly-Silicon-Germanium nucleation layer LPCVD |
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| Material |
poly-Silicon-Germanium |
|---|
| Sides processed |
both |
|---|
| Temperature |
400 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
Tystar furnace 20 (Ge / SiGe tube) |
| Equipment characteristics: |
| Batch sizes |
100 mm: 24, 150 mm: 12 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, no-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
fused silica boat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 600 µm |
|---|
| Comments: |
|
