Process Hierarchy

on front
  Platinum DC-magnetron sputtering (high power)
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.01 .. 0.5 µm
0.01 .. 0.5 µm
Ambient to which substrate is exposed during processing
Batch size 1
Deposition rate
Rate at which material is added to a wafer
0.0372 µm/min
Excluded materials gold (category), copper
Material platinum
Pressure of process chamber during processing
5 mTorr
Sides processed either
Temperature 31 °C
Wafer size
Wafer size
Equipment High Res 100
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
stainless steel
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon dioxide, alumina, Borofloat (Schott)
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1000 µm
  • This process uses a cathode power of 500W. An rf preclean can be performed prior to deposition. A thin Ti adhesion promoting layer (100A) may be required.
Extra terms