Process Hierarchy

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  Titanium DC-magnetron sputtering
Process characteristics:
Thickness of material to be deposited.
Thickness of material to be deposited., must be 0 .. 1 µm
0 .. 1 µm
Ambient to which substrate is exposed during processing
Batch size 12
Deposition rate
Rate at which material is added to a wafer
0.03 µm/min
Material titanium
Pressure of process chamber during processing
4e-08 mbar
Sides processed either
Temperature 40 .. 250 °C
Wafer size
Wafer size
Equipment Gryphon Sputtering System
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, quartz (single crystal), silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • The wafers should go through a full re-diffusion or pre-LPCVD clean at either the diffusion or silicide wetbenches clean prior to this process.