on front Silicon dioxide VLR700 PECVD |
|
| Process characteristics: |
| Thickness |
|
|---|
| Deposition rate Rate at which material is added to a wafer |
270 Å/min |
|---|
| Gas |
5% Silane, Nitrous oxide, Helium |
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| Material |
silicon dioxide |
|---|
| Microstructure |
amorphous |
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| Pressure Pressure of process chamber during processing |
900 mTorr |
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| Refractive index |
1.45 |
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| Residual stress |
-250 MPa |
|---|
| Sides processed |
either |
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| Temperature |
250 °C |
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| Wafer size |
|
|---|
| Equipment |
Unaxis VLR 700 PECVD |
| Equipment characteristics: |
| Batch sizes |
100 mm: 25 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat |
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| Wafer holder Device that holds the wafers during processing. |
cassette |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon on insulator |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 700 µm |
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