on front Contact photolithography |
|
| Process characteristics: |
| Alignment type Method used for mask alignment |
|
|---|
| Perform hard bake |
|
|---|
| Resist thickness |
|
|---|
| Alignment tolerance Registration of CAD data to features on wafer |
-0.5 .. 0.5 µm |
|---|
| Magnification |
1 |
|---|
| Material |
photoresist (I-line) (category) |
|---|
| Min feature size |
1 .. 5 µm |
|---|
| Sides processed |
either |
|---|
| Wafer size |
|
|---|
| Equipment |
EVG aligner |
| Equipment characteristics: |
| Batch sizes |
100 mm: 1, 150 mm: 1 |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Pyrex (Corning 7740), fused silica, silicon, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 1000 µm |
|---|
| Extra terms |
No materials with Gold contamination will be processed at this fab site. Certain services (for example, oxidation, diffusion, and sputter deposition) will be provided if wafers are virgin, or all pre-processing steps have been performed at this fab site. |
