Process Hierarchy

  HF etch (10:1) Single Wafer
Process characteristics:
must be 0.1 .. 10 µm
0.1 .. 10 µm
Batch sizes 100 mm: 1, 150 mm: 1
Etch type wet isotropic
Solutions and their concentrations.
HF/water [1:10]
Material silicon dioxide
Sides processed both
Temperature 25 °C
Wafer size
Wafer size
Equipment Wet Bench (acid)
Equipment characteristics:
Piece dimension
Range of wafer piece dimensions the equipment can accept
0 .. 100 mm
Piece geometry
Geometry of wafer pieces the equipment can accept
triangular shard, other, rectangular, irregular, circular
Piece thickness
Range of wafer piece thickness the equipment can accept
300 .. 800 µm
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer holder
Device that holds the wafers during processing.
teflon carrier
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 800 µm