HF etch (10:1) Single Wafer |
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| Process characteristics: |
| Depth |
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| Batch sizes |
100 mm: 1, 150 mm: 1 |
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| Etch type |
wet isotropic |
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| Etchant Solutions and their concentrations. |
HF/water [1:10] |
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| Material |
silicon dioxide |
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| Sides processed |
both |
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| Temperature |
25 °C |
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| Wafer size |
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| Equipment |
Wet Bench (acid) |
| Equipment characteristics: |
| Piece dimension Range of wafer piece dimensions the equipment can accept |
0 .. 100 mm |
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| Piece geometry Geometry of wafer pieces the equipment can accept |
triangular shard, other, rectangular, irregular, circular |
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| Piece thickness Range of wafer piece thickness the equipment can accept |
300 .. 800 µm |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer holder Device that holds the wafers during processing. |
teflon carrier |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 800 µm |
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| Comments: |
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