Process Hierarchy

on front
  Silicon DRIE
  1.2 HMDS prime
on front
  1.4 Photoresist softbake
on front
  1.6 Contact G-line exposure
Materialsilicon
on front
  3 Microscope inspection
Process characteristics:
Depth
Depth of material removed by etch process
Depth*
Depth of material removed by etch process, must be 0 .. 525 µm
0 .. 525 µm
Perform handle wafer mounting
If mounting of device wafers on handle wafers is necessary for processing, select yes here.
Perform handle wafer mounting*
yes no
If mounting of device wafers on handle wafers is necessary for processing, select yes here.
Perform photolithography
Please select one of photolithography options listed here.
Perform photolithography*
Please select one of photolithography options listed here.
Perform stylus profilometry
Optional metrology step for depth <300um.
One measurement per wafer.
Perform stylus profilometry*
yes no
Optional metrology step for depth <300um. One measurement per wafer.
Aspect ratio 20
Batch size 1
Etch rate 2 µm/min
Etchant
Solutions and their concentrations.
Bosch process
Mask materials
Materials that can be used to mask etching.
OCG 825 35CS, Arch OiR 897-10i, silicon dioxide, silicon nitride
Material silicon
Min feature size 4 µm
Sides processed either
Wafer holder
Device that holds the wafers during processing.
electrostatic chuck
Wafer size
Wafer size
Comments:
  • The handle wafer processing steps will be included automatically, if the etch depth is >300um, but they can be also included by request (please use the field entitled "perform handle wafer mounting")
  • Please contact us for additional metrology steps.