Process Hierarchy

on front
  Silicon DRIE with anti-footing SOI option
Process characteristics:
must be 0 .. 525 µm
0 .. 525 µm
Allowed materials silicon dioxide, OCG 825 35CS, silicon nitride, Arch OiR 897-10i, silicon (category)
Aspect ratio 20
Batch size 1
Etch rate 2 µm/min
Material silicon
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 75, silicon dioxide: 150, silicon: 1
Sides processed either
Wafer size
Wafer size
Equipment STS DRIE
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Wafer holder
Device that holds the wafers during processing.
electrostatic chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
100 .. 750 µm
  • Bosch Process