Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Nitrogen anneal
Process characteristics:
Process duration
Running time of the process (excluding setup/shutdown time)
Process duration
Running time of the process (excluding setup/shutdown time), must be 1 .. 180 min
1 .. 180 min
Temperature
Maximum temperature the substrate reaches during a process
Temperature*
Maximum temperature the substrate reaches during a process, must be 450 .. 1100 °C
450 .. 1100 °C
Ambient
Ambient to which substrate is exposed during processing
 nitrogen
Sides processed both
Wafer size
Wafer size
Equipment Furnace (N2 anneal)
Equipment characteristics:
Batch sizes 100 mm: 25
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, no-flat, notched
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm