Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Metal lift-off
on front
  1 Contact photolithography (Shipley 1827)
MaterialShipley 1827Resist thickness2.7 µm
  1.1 Prebake
on front
  1.2 HMDS coat
MaterialHMDS
on front
  1.3 Photoresist coat (Shipley 1827)
MaterialShipley 1827Thickness2.7 µm
  1.4 Photoresist softbake
on front
  1.5 Optical Front-to-Front Alignment
on front
  1.6 Optical Exposure
  1.7 Photoresist develop (Shipley 1827)
MaterialShipley 1827
on front
  2 Photoresist ashing I (metal allowed)
Materialphotoresist (category)
on front
  3 E-beam Evaporation (Cr)
Materialchromium
on front
  4 E-beam Evaporation (Au)
Materialgold
  5 Lift-off etch
MaterialShipley 1827
on front
  6 Stylus profilometer step measurement
Depth100 µm
Process characteristics:
Adhesion layer material
Adhesion layer material*
Adhesion layer thickness
Adhesion layer thickness*
must be 30 .. 50 nm
30 .. 50 nm
Alignment side
Alignment side*
Material
Material*
Thickness
Thickness*
must be 100 .. 2000 Å
100 .. 2000 Å
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Magnification 1
Max field size 100 mm
Min feature size 5 µm
Resist thickness 2.7 µm
Wafer size
Wafer size
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