Process Hierarchy

on front
  Photoresist ashing I (metal allowed)
Ambient to which substrate is exposed during processing
Batch size 1
Material photoresist (category)
Microwave power radiated into substrates being bonded
100 W
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment Plasma Asher
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), Pyrex (Corning 7740), silicon on insulator, silicon, ceramic
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 800 µm