Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Nitrogen anneal (non-MOS-clean) Down
Process characteristics:
Process duration
Running time of the process (excluding setup/shutdown time)
Process duration
Running time of the process (excluding setup/shutdown time), must be 0 .. 4 hour
0 .. 4 hour
Temperature
Maximum temperature the substrate reaches during a process
Temperature*
Maximum temperature the substrate reaches during a process, must be 23 .. 1050 °C
23 .. 1050 °C
Ambient
Ambient to which substrate is exposed during processing
 nitrogen
Setup time 60 min
Sides processed both
Wafer size
Wafer size
Equipment Lindberg furnace Unavailable
  • Gold contaminated.
    This is a non-MOS-clean furnace.
Equipment characteristics:
Batch sizes 100 mm: 12
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Borofloat (Schott), Foturan (Schott), silicon, Pyrex (Corning 7740), silicon on insulator, quartz (fused silica), quartz (single crystal), PZT, glass (Hoya), Corning 1737
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 1000 µm