Process Hierarchy

on front
  Silicon dioxide plasma etch (anisotropic, MOS clean)
Materialsilicon dioxide
on front
  3 Resist ash
Materialphotoresist (category)
Process characteristics:
Depth of material removed by etch process
Depth of material removed by etch process, must be 0 .. 1 µm
0 .. 1 µm
Material silicon dioxide
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
photoresist (category): 7.5, silicon dioxide: 1, silicon: 7.5
Wafer size
Wafer size
  • If Chamber D of P5000 not available, manual passivation/strip procedure must be performed.