Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact photolithography (SU-8)
on front
  1 Epoxy coat (SU-8)
MaterialSU-8
  2 Photoresist softbake (SU-8)
MaterialSU-8
on front
  3 Contact front-to-front Align & Expose
  4 Post exposure bake (SU-8)
  5 Photoresist develop (SU-8)
MaterialSU-8
  6 IPA rinse and dry
Process characteristics:
Alignment side
Alignment side*
Resist thickness
Resist thickness*
must be 20 .. 800 µm
20 .. 800 µm
Alignment tolerance
Registration of CAD data to features on wafer
 1 .. 10 µm
Batch size 4
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 equal line space
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Magnification 1
Material SU-8
Max field size 200 mm
Min feature size 1 .. 50 µm
Photoresist polarity negative
Wafer diameter(s)
List or range of wafer diameters the tool can accept
 75 .. 200 mm
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 glass (category), silicon, silicon on insulator
Wafer size
Wafer size
Comments: