Process Hierarchy

  Forming gas anneal (N2/H2)
  1.2 10:1 HF dip
Process characteristics:
Perform clean
Perform clean*
yes no
Process duration
Running time of the process (excluding setup/shutdown time)
Process duration
Running time of the process (excluding setup/shutdown time), must be 0 .. 4 hour
0 .. 4 hour
Temperature
Maximum temperature the substrate reaches during a process
Temperature*
Maximum temperature the substrate reaches during a process, must be 400 .. 500 °C
400 .. 500 °C
Batch size 24
Excluded materials gold
Wafer size
Wafer size
Comments:
  • Clean will be skipped if anneal immediately follows furnace step at UCB (deposition or oxidation).