Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  G-line contact photolithography (Shipley 3612)
  1 Dehydration bake
on front
  2 100% HMDS prime
MaterialHMDS
on front
  3 Photoresist coat (Shipley 3612)
MaterialShipley 3612
  4 Soft bake
on front
  5 Contact front-front alignment & exposure
on front
  6 Photoresist develop (Shipley 3612)
MaterialShipley 3612
Process characteristics:
Alignment type
Method used to align materials to be bonded.
Alignment type*
Method used to align materials to be bonded.
Resist thickness
Resist thickness*
Magnification 1
Material Shipley 3612
Max field size 100 mm
Min feature size 0.75 µm
Wafer size
Wafer size
Comments: