Process Hierarchy

on front
  Contact photolithography (front-front align) (SU-8)
MaterialSU-8
MaterialSU-8
on front
  5 Contact exposure
MaterialSU-8
MaterialSU-8
Process characteristics:
Perform dehydration bake
Perform dehydration bake*
yes no
Perform hard bake
Perform hard bake*
yes no
Resist thickness
Amount of material added to a wafer.

Thickness tolerance is +/-10%
Resist thickness*
Amount of material added to a wafer. Thickness tolerance is +/-10%, must be 4 .. 400 µm
4 .. 400 µm
Magnification 1
Material SU-8
Min feature size 10 µm
Wafer size
Wafer size
Comments:
  • Pricing determined on case-by-case basis.