on front Resist hardening |
|
| Batch size |
4 |
|---|
| Pressure Pressure of process chamber during processing |
760 Torr |
|---|
| Process duration |
75 min |
|---|
| Sides processed |
either |
|---|
| Temperature |
110 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
UV Harden |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
plate |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, silicon germanium, silicon on insulator, quartz (single crystal) |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 700 µm |
|---|
| Comments: |
|
