| 
        
        
            
              | Process characteristics: | 
            
            | Materials Material(s) to inspect.
   | 
             | 
            
            | Excluded materials | 
            gold (category), copper | 
            
            | Magnification | 
            20 .. 300000 | 
            
            | Pressure Pressure of process chamber during processing  | 
            1e-07 .. 10 Torr | 
            
            | Sides inspected The sides of the wafer inspected by the process  | 
            either | 
            
            | Temperature | 
            -20 .. 1500 °C | 
            
            
            | Wafer size | 
            
 | 
            
            
            
            | Equipment | 
            Philips XL-30 ESEM
  | 
            
            
            
              | Equipment characteristics: | 
            
            | Batch sizes | 
            100 mm: 1, 75 mm: 1 | 
            
            | MOS clean | 
            no | 
            
            | Piece dimension Range of wafer piece dimensions the equipment can accept  | 
            5 .. 100 mm | 
            
            | Piece geometry Geometry of wafer pieces the equipment can accept  | 
            circular, irregular, other, rectangular, triangular shard | 
            
            | Piece thickness Range of wafer piece thickness the equipment can accept  | 
            0 .. 1 cm | 
            
            | Wafer geometry Types of wafers this equipment can accept  | 
            1-flat, 2-flat, no-flat, notched | 
            
            | Wafer holder Device that holds the wafers during processing.  | 
            aluminum plate | 
            
            | Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself).  | 
            alumina, BK7, Borofloat (Schott), ceramic, copper, Corning 1737, Foturan (Schott), fused silica, gallium arsenide, gallium phosphide, germanium, glass (Hoya), glass-ceramic, indium phosphide, lithium niobate, other, Pyrex (Corning 7740), quartz (fused silica), quartz (single crystal), sapphire, silicon, silicon carbide, silicon germanium, silicon on insulator, silicon on sapphire, titanium | 
            
            | Wafer thickness List or range of wafer thicknesses the tool can accept  | 
            0 .. 1 cm | 
            
            
            
              | Comments: | 
            
            
        
           | 
        
        
            
              | Extra terms | 
            
            
        
                  Customer agrees that wafers, masks, and other materials
        incorporating any process(es) provided by this fabrication site
        are to be used solely for non-commercial research
        purposes.
          |