Process Hierarchy

  Rapid Thermal Anneal Oxide, Nitride (air, oxygen, nitrogen)
Process characteristics:
Anneal ambient
Anneal ambient*
Process duration
Process duration*
must be 1 .. 5 min
1 .. 5 min
must be 500 .. 800 °C
500 .. 800 °C
Sides processed both
Wafer size
Wafer size
Equipment Heat Pulse 610 Dielectric Rapid Thermal Anneal
Equipment characteristics:
Batch sizes 100 mm: 1, 125 mm: 1, 150 mm: 1, 50 mm: 1, 75 mm: 1
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat, notched
Wafer holder
Device that holds the wafers during processing.
quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 600 µm