If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
or call us at (703) 262-5368
must be 10 .. 60 min
10 .. 60 min
Maximum temperature the substrate reaches during a process
Maximum temperature the substrate reaches during a process, must be 300 .. 500 °C
300 .. 500 °C
Ambient to which substrate is exposed during processing
Forming Gas (N2/H2)
gold (category), copper
Pressure of process chamber during processing
MRL Furnace 322-4
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Borofloat (Schott), quartz (single crystal), silicon
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
This process allows for sintering of metallized wafers
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.
How to Start