Process Hierarchy

  POCl3 diffusion
Ambient to which substrate is exposed during processing
Batch size 25
Film grown
Material grown during a process
silicon dioxide
Growth rate
Rate at which film grows (linear approximation)
0.03 nm/min
Material phosphoryl chloride
Process duration 3 hour
Sides processed both
Temperature 950 °C
Thermal duration 45 min
Wafer size
Wafer size
Equipment Tylan/Tystar Furnaces (PSG tube)
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 1500 µm