Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  DRIE (PT DSE)
Process characteristics:
Depth
Depth*
must be 1 .. 750 µm
1 .. 750 µm
Aspect ratio 15
Etch rate 4 µm/min
Etch type dry anisotropic
Gas SF6, C4F8, Argon, O2
Material silicon
Selectivity
Primary material removal rate divided by removal rates of secondary materials (i.e., factors by which primary material is removed faster than secondary materials)
 AZ 5214: 75, silicon dioxide: 150, silicon: 1
Sides processed either
Temperature 25 °C
Wafer size
Wafer size
Equipment PT Versaline DSE
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1, 200 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 100 .. 1000 µm